Dual-channel EST/BRT: a new high-voltage MOS-gated thyristor structure

摘要

A new MOS-gated thyristor structure, in which a BRT section is incorporated into the dual-channel EST (DC-EST) to enhance maximum controllable current densities, is presented. This structure has been demonstrated experimentally to have a maximum controllable current density about 2.5 times greater than that of the DC-EST, with only a small increase in the on-state voltage drop.