Thermionic field emission in p-barrier enhanced InP/InGaAs/InP HEMTs

Schimpf K.; Horstmann M.

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Thermionic field emission in p-barrier enhanced InP/InGaAs/InP HEMTs

机译：p势垒增强的InP / InGaAs / InP HEMT中的热电子场发射

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A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness. Good agreement between this model and our experimental data is obtained.

机译：提出了p势垒增强型InP HEMT中的热电子场发射模型，表明这些器件的栅极泄漏的减少与有效势垒厚度的增加有关。该模型与我们的实验数据之间取得了很好的一致性。

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《Electronics Letters》 |1996年第23期|P.2132-2134|共3页
作者
Schimpf K.; Horstmann M.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Double-heterojunction lattice-matched and pseudomorphic InGaAs HEMT with delta -doped InP supply layers and p-InP barrier enhancement layer grown by LP-MOVPE [J] . Mesquida Kusters A., Kohl A. IEEE Electron Device Letters . 1993,第1期

机译：双异质结晶格匹配和伪形InGaAs HEMT，具有通过LP-MOVPE生长的掺do InP供应层和p-InP势垒增强层
2. Enhanced mobility piezoelectric AlInAs/InGaAs quantum wellstructures on (111)B InP substrates [HEMTs] [J] . Hitchens L.J., Houston P.A., Hopkinson M., Electronics Letters . 1995,第25期

机译：（111）B InP衬底[HEMT]上增强迁移率的压电AlInAs / InGaAs量子阱结构
3. Enhanced photoluminescence emission from bandgap shifted InGaAs/InGaAsP/InP microstructures processed with UV laser quantum well intermixing [J] . Liu N., Poulin S., Dubowski J.J. Journal of Physics, D. Applied Physics: A Europhysics Journal . 2013,第44期

机译：带隙位移的InGaAs / InGaAsP / InP微结构经紫外激光量子阱混合处理后增强了光致发光发射
4. High reliability of 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates [C] . Chou, Y.C., Leung, Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th . 2002

机译：在3英寸InP基板上具有0.07 / spl mu / m的准晶格InGaAs / InAlAs / InP HEMT MMIC的高可靠性
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires [O] . Xianghai Ji, Xiren Chen, Xiaoguang Yang, 2018

机译：InGaAs / InP核壳纳米线的自种MOCVD生长和显着增强的光致发光
7. Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH [O] . Zhihang Tong, Peng Ding, Yongbo Su, 2020

机译：通过紫外/臭氧和TMAH治疗inalas / Ingaas Inp的血管的表面改善

Thermionic field emission in p-barrier enhanced InP/InGaAs/InP HEMTs

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