Carbon and aluminium co-implantation for p-type doping in 6H-SiC

摘要

N-type 6H-SiC wafers have been implanted with C and Al, or Al only, at room temperature or 600/spl deg/C for a comparative study with the emphasis on determining the dependence of the sheet resistivity and specific contact resistance of Al ohmic contacts on the concentration of implanted Al. The optimum implantation concentration is reported for the first time, along with clear evidence showing the advantage of C-Al co-implantation over Al single implantation.