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Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport

机译:WS2单层的碳掺杂:带隙减少和p型掺杂传输

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摘要

Chemical doping constitutes an effective route to alter the electronic, chemical, and optical properties of two-dimensional transition metal dichalcogenides (2D-TMDs). We used a plasma-assisted method to introduce carbon-hydrogen (CH) units into WS2 monolayers. We found CH-groups to be the most stable dopant to introduce carbon into WS2, which led to a reduction of the optical bandgap from 1.98 to 1.83 eV, as revealed by photoluminescence spectroscopy. Aberration corrected high-resolution scanning transmission electron microscopy (AC-HRSTEM) observations in conjunction with first-principle calculations confirm that CH-groups incorporate into S vacancies within WS2. According to our electronic transport measurements, undoped WS2 exhibits a unipolar n-type conduction. Nevertheless, the CH-WS2 monolayers show the emergence of a p-branch and gradually become entirely p-type, as the carbon doping level increases. Therefore, CH-groups embedded into the WS2 lattice tailor its electronic and optical characteristics. This route could be used to dope other 2D-TMDs for more efficient electronic devices.
机译:化学掺杂是改变二维过渡金属二卤化金属(2D-TMD)的电子,化学和光学性质的有效途径。我们使用等离子辅助方法将碳氢(CH)单元引入WS2单层。我们发现,CH-基团是将碳引入WS2的最稳定的掺杂剂,这导致光学带隙从1.98 eV降低到1.83 eV,如光致发光光谱法所揭示。像差校正的高分辨率扫描透射电子显微镜(AC-HRSTEM)观察结果与第一原理计算相结合,确认CH-基团纳入WS2的S空位中。根据我们的电子传输测量,未掺杂的WS2表现出单极性n型传导。然而,CH-WS2单层显示出p分支的出现,并随着碳掺杂水平的提高而逐渐完全变为p型。因此,嵌入到WS2晶格中的CH组可调整其电子和光学特性。此路线可用于掺杂其他2D-TMD,以实现更高效的电子设备。

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