Low-threshold GaInP/AlGaInP ridge waveguide lasers

摘要

The authors have fabricated low-threshold 670 nm GaInP/AlGaInP ridge waveguide lasers based on a combined dry- and wet-etching technique. Minimum CW threshold currents of 10.4 mA with a differential quantum efficiency of 72% have been obtained for a 2 /spl mu/m wide and 200 /spl mu/m long triple quantum well laser. A maximum output power of 23 mW per facet is achieved for this uncoated device. Single transverse mode operation is observed for output powers of up to 14 mW per facet.