High-efficiency GaInP-AlGaInP ridge waveguide single-mode lasers operating at 650 nm

摘要

In this letter, the authors report a very high quantum efficiency of 91% for antireflection/high-reflection-coated GaInP-AlGaInP ridge waveguide laser diodes operating at 650 nm range. The laser structure was grown by solid-source molecular beam epitaxy. The laser diodes performed stable single-mode operation up to 60 mW. Threshold current as low as 50 mA was measured for 5.5/spl times/600 /spl mu/m/sup 2/ laser diodes. To the authors' best knowledge, this is among the best ever reported efficiency for visible lasers.