Monolithic vertical cavity device lasing at 1.55 /spl mu/m in InGaAlAs system

摘要

The authors present the first demonstration of a monolithic vertical cavity laser optically pumped at 1.55 /spl mu/m. The laser cavity is grown in a single run by low pressure MOVPE and the total thickness is 16.4 /spl mu/m with an InGaAlAs (/spl lambda//sub x/=1.55 /spl mu/m) bulk active region (3/spl lambda//2 thick) between two InGaAlAs (/spl lambda//sub x/=1.45 /spl mu/m)/InAlAs Bragg stacks.