Effect of channel thickness on linearity of double pulse doped AlInAs/GaInAs/InP HEMTs

摘要

The effect of channel thickness on device characteristics was explored using double pulse doped AlInAs/GaInAs/InP HEMTs. On-wafer RF characterisation results revealed that the transconductance variation with gate voltage can be significantly minimised by increasing the channel thickness. However, a tradeoff between linearity and peak unity current gain cutoff frequency exists as a result of increased average separation between the gate and the 2D electron gas.