EEPROM transistor fabricated with stacked SiO/sub x/ LPCVD films

摘要

The key fabrication steps and the write/erase characteristics of a new memory metal-insulator-silicon transistor are presented. The memory cell is composed of a single silicon gate and a stacked SiO/sub x/ LPCVD film as an active memory film. With this new arrangement, the memory device shows excellent endurance.