GaInP/AlInP tunnel junction for GaInP/GaAs tandem solar cells

Li W.; Lammasniemi J.

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GaInP/AlInP tunnel junction for GaInP/GaAs tandem solar cells

机译：GaInP / GaAs串联太阳能电池的GaInP / AlInP隧道结

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摘要

A GaInP/AlInP tunnel diode has been grown by a gas-source molecular beam epitaxy method. A high conductance of 15 mA/cm/sup 2/ at 2.7 mV has been achieved. Using closely optimised growth conditions very high carrier concentrations, both in GaInP and AlInP have been obtained.

机译：GaInP / AlInP隧道二极管已经通过气源分子束外延法生长。在2.7 mV时实现了15 mA / cm / sup 2 /的高电导率。使用紧密优化的生长条件，已获得GaInP和AlInP中非常高的载流子浓度。

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来源
《Electronics Letters》 |1998年第4期|P.406-407|共2页
作者
Li W.; Lammasniemi J.;
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作者单位

Dept. of Phys., Tampere Univ.;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
gallium compounds; 2.7 mV; GaInP-AlInP; GaInP-AlInP tunnel junction; GaInP-GaAs; GaInP-GaAs tandem solar cells; gas-source MBE; high carrier concentrations; molecular beam epitaxy method; optimised growth conditions; tunnel diode;

机译：镓化合物;2.7 mV;GaInP-AlInP;GaInP-AlInP隧道结;GaInP-GaAs;GaInP-GaAs串联太阳能电池;气源MBE;高载流子浓度;分子束外延法;优化的生长条件;隧道二极管;

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1. GaInP/GaAs tandem solar cells with highly Te-and Mg-doped GaAs tunnel junctions grown by MBE [J] . 郑新和, 刘三姐, 夏宇, 中国物理：英文版 . 2015,第010期

机译：由MBE生长的具有高Te和Mg掺杂GaAs隧道结的GaInP / GaAs串联太阳能电池
2. Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells [J] . Ho Kwan Kang, Sang-Hyuk Park, Dong Hwan Jun, Semiconductor science and technology . 2011,第7期

机译：GaInP / GaAs串联太阳能电池的GaAs隧道结中的Te掺杂
3. Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction [J] . Chang Zoo Kim, Hogyoung Kim, Keun Man Song, Microelectronic Engineering . 2010,第4期

机译：在隧道结中使用碳掺杂GaAs增强了GaInP / GaAs串联太阳能电池的效率
4. EFFECT OF GAINP LATTICE MICROSTRUCTURE ON THE ALGAAS/GAINP TUNNELING DIODE IN GAINP/GAAS/GE TRIPLE-JUNCTION SOLAR CELL [C] . Wei Zhang, Mengyan Zhang, Mingbo Chen, . 2007

机译：GAINP晶格微观结构对GAINP / GAAS / GE三键结太阳能电池藻类/ GAINP隧穿二极管的影响
5. Characterisation of high-efficiency multi-junction solar cells and tunnel junctions. [D] . Kolhatkar, Gitanjali. 2011

机译：高效多结太阳能电池和隧道结的表征。
6. Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell [O] . Hui Gao, Ruixia Yang, Yonghui Zhang 2020

机译：使用中间子电池中的GaInP后表面场提高GaInP / GaInAs / Ge三结太阳能电池的抗辐射能力
7. Desarrollo de células solares de doble unión de GaInP/GaAs para concentraciones luminosas elevadas (Development of GaInP/GaAs dual-junction solar cells for high light concentrations). [O] . García Vara Iván 2010

机译：高光浓度GaInP / GaAs双结太阳能电池的开发（高光浓度GaInP / GaAs双结太阳能电池的开发）。
8. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint [R] . Moriarty, T. E., Kiehl, J. T., Romero, M. J., 2008

机译：具有低应力变质底部结的倒置GaInp /（In）Gaas / InGaas三结太阳能电池：预印

GaInP/AlInP tunnel junction for GaInP/GaAs tandem solar cells

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