首页> 外文会议> >EFFECT OF GAINP LATTICE MICROSTRUCTURE ON THE ALGAAS/GAINP TUNNELING DIODE IN GAINP/GAAS/GE TRIPLE-JUNCTION SOLAR CELL
【24h】

EFFECT OF GAINP LATTICE MICROSTRUCTURE ON THE ALGAAS/GAINP TUNNELING DIODE IN GAINP/GAAS/GE TRIPLE-JUNCTION SOLAR CELL

机译:GAINP晶格微观结构对GAINP / GAAS / GE三键结太阳能电池藻类/ GAINP隧穿二极管的影响

获取原文

摘要

A numerical simulation was carried out to study the effect of sublattice ordering on the AlGaAs/GaInP2 wide band gap tunneling diode. The self-consistent solution of heterojunction Poisson equation and Schrodinger equation was calculated to give the band profile of a GaInP/GaAs tandem solar cell.
机译:进行了数值模拟,研究了亚晶格有序对AlGaAs / GaInP2宽带隙隧穿二极管的影响。计算了异质结泊松方程和薛定inger方程的自洽解,给出了GaInP / GaAs串联太阳能电池的能带分布。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号