Low-voltage, high-speed AlSb-InAsSb HEMTs

摘要

Antimonide-based HEMTs have been fabricated with an InAsSb channel. Infra-red photoluminescence measurements at 5 K confirm that the addition of Sb changes the band structure from a staggered type II heterojunction lineup to a type I. These HEMTs with 0.1 /spl mu/m gate length exhibit decreased output conductance and improved voltage gain. At V/sub DS/=0.6 V, a microwave transconductance of 700 mS/mm and an output conductance of 110 mS/mm were obtained corresponding to a voltage gain of 6.