High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt

摘要

An epitaxial structure and method of manufacture for a field- effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the epitaxial structure includes a donor layer and/or buffer layer made from a semiconductor material having the formula AlP.sub.0.39+y Sb.sub.0.61-y.