In/sub 0.53/Al/sub 0.22/Ga/sub 0.25/As/InP heterojunction bipolar transistor with /spl delta/-doped continuous-conduction-band (CCB) structure

摘要

A new In/sub 0.53/Al/sub 0.22/Ga/sub 0.25/As/InP heterojunction bipolar transistor with a /spl delta/-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the /spl delta/-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50 mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications.