GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors with zero-offset and low-knee-voltage characteristics

摘要

Collector-up GaInP/GaAs heterojunction bipolar transistors with a 10 nm-thick GaInP tunnel layer, which prevents the flow of holes at the base-collector junction while allowing the electrons to flow, have been realised which have current-voltage characteristics with almost zero offset (5 to 10 mV) and a very small knee voltage of 0.34 V at 0.5 kA/cm/sup 2/. These characteristics make the transistors attractive candidates for high-efficiency high power amplifiers.