Deposition and properties of polycrystalline /spl beta/-SiC films using LPCVD with different dopant amount

摘要

The physical and electrical properties of polycrystalline /spl beta/-SiC were studied according to different nitrogen doping concentration. The crystalline peaks SiC(111), SiC(220), SiC(311) and SiC(222) appeared in XRD analysis of poly-SiC films deposited on Si substrates covered with thermally-grown SiO/sub 2/. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The size of resistance ratio was much bigger in films with low doping. On the other hand, the linearity of resistance variation was better in films with high doping.