首页> 外文期刊>Electronics Letters >58-72 GHz CMOS wideband variable gain low-noise amplifier
【24h】

58-72 GHz CMOS wideband variable gain low-noise amplifier

机译:58-72 GHz CMOS宽带可变增益低噪声放大器

获取原文
获取原文并翻译 | 示例
           

摘要

A V-band wideband variable gain low-noise amplifier (VGLNA) with a 3 dB bandwidth of 14 GHz (58-72 GHz) is developed in a 65 nm RFCMOS technology. The three-stage VGLNA, adopting the current steering method for the gain control, shows a measured peak power gain of 21.8 dB with a 1 dB gain flatness of 10 GHz (60-70 GHz). With tuning voltage adjusted from 0.8 to 2.8 V, the gain and noise figure are varied from 21.8 to 12.8 dB and from 4.2 to 5.7 dB, respectively, at 64 GHz. Input P1dB was measured to be -22.1 dBm. DC power consumption is 36 mW with VDD = 1.2 V and the chip size is 0.75 × 0.65 mm.
机译:在65 nm RFCMOS技术中开发了3 dB带宽为14 GHz(58-72 GHz)的V波段宽带可变增益低噪声放大器(VGLNA)。采用电流转向方法进行增益控制的三级VGLNA,测得的峰值功率增益为21.8 dB,增益平坦度为10 GHz(60-70 GHz),为1 dB。将调谐电压从0.8调整到2.8 V,在64 GHz时,增益和噪声系数分别从21.8 dB到12.8 dB和从4.2 dB到5.7 dB变化。测量的输入P1dB为-22.1 dBm。 VDD = 1.2 V时,DC功耗为36 mW,芯片尺寸为0.75×0.65 mm。

著录项

  • 来源
    《Electronics Letters》 |2011年第16期|p.904-906|共3页
  • 作者单位

    School of Electrical Engineering, Korea University, 5-1 Anam, Seongbuk,Seoul 136-713, Republic of Korea;

    School of Electrical Engineering, Korea University, 5-1 Anam, Seongbuk,Seoul 136-713, Republic of Korea;

    School of Electrical Engineering, Korea University, 5-1 Anam, Seongbuk,Seoul 136-713, Republic of Korea;

    School of Electrical Engineering, Korea University, 5-1 Anam, Seongbuk,Seoul 136-713, Republic of Korea;

    School of Electrical Engineering, Korea University, 5-1 Anam, Seongbuk,Seoul 136-713, Republic of Korea;

    School of Electrical Engineering, Korea University, 5-1 Anam, Seongbuk,Seoul 136-713, Republic of Korea;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号