Spiral shape CNT on silicon substrate growth control method for on-chip electronic devices applications

摘要

Carbon nanotubes (CNTs) with their different types have several potential future applications, including on-chip integrated electronic devices. The growth control of CNTs in the desired shape is important to realise such devices. A method to control the growth of CNTs in a desired spiral shape or other similar shapes on silicon (Si) substrates is proposed. Multi-walled carbon nanotube growth in a circular spiral shape is demonstrated by using a trenched-patterned-shape on the Si substrate method. The growth concept, the growth and fabrication steps, and the growth and fabrication results are presented.