Fractal series stacked inductor for radio frequency integrated circuit applications

摘要

High-quality factor miniaturised inductors are prerequisites of radio frequency integrated circuit applications. This Letter presents a novel fractal stacked inductor using modified Hilbert space filling curve. The proposed inductor achieves higher inductance value and good quality factor because of mutual inductance between plural metal layers and the reduced parasitic resistance. The results show that more than double improvement in over conventional fractal inductors and more than double improvement in quality factor value over conventional series stack construction.