Frequency response of an internal amplifier in a high-speed integrated circuit measured by electro-optic sampling

摘要

The frequency response of an FET amplifier within a high-speed GaAs integrated circuit has been measured directly using ultrashort optical pulses from a gain-switched GaInAsP injection laser and the electro-optic sampling technique. The 3 dB bandwidth for the FET amplifier is 4-4.5 GHz.