AlGaAs/GaInAs strained-base pnp heterojunction bipolar transistors

摘要

Reports the first strained-layer pnp heterojunction bipolar transistors fabricated in the AlGaAs/GaInAs/GaAs system. Despite significant lattice mismatch between the Ga/sub 0.9/In/sub 0.1/As base layer and AlGaAs emitter, the current gain was comparable to that of similar AlGaAs/GaAs transistors. A maximum gain of 35 was observed for a device with graded In content across the base.