MOCVD growth of GaAs/AlGaAs wavelength resonant periodic gain vertical cavity surface-emitting laser

摘要

The first all-semiconductor GaAs/AlGaAs vertical cavity laser incorporating wavelength resonant periodic gain layers grown by metalorganic chemical vapour deposition is reported. The optically pumped structure exhibits a threshold of 0.5 nJ at 852 nm for 720 nm pulsed excitation and energy conversion efficiencies up to approximately 6%. The output linewidth is >or=0.4 nm FWHM with single longitudinal mode oscillation. An output of 0.43 nJ ( approximately 60 mW) is demonstrated at 300 K.