Trends in automotive MOSFETs

摘要

The trend for 30-V MOSFET-spe-cific on-resistance (R_(DS(on)) Per unit area) reduction is of the order of 20% per year. With improvements in both silicon and packaging technologies, building cost- and size-efficient MOSFETs with an R_(DS(on)) of less than 1 mΩ is on the horizon. Such devices will help to make applications like the integrated starter/generator, electronic power steering, electronic valve timing, and electronic brakes cost effective enough for widespread use in vehicles. Ultimately they will help to further reduce emissions and improve vehicle fuel efficiency.