Amorphous-SiC thin-film p-i-n light-emitting diode using amorphous-SiN hot-carrier tunneling injection layers

摘要

An approach to improve the luminosity of hydrogenated amorphous silicon carbide (a-SiC:H)-based thin-film visible light-emitting diodes is discussed. High bandgap near-stoichiometric hydrogenated amorphous silicon nitride (a-SiN:H) is utilized as a hot-carrier tunneling injection layer. An improvement of both carrier injection efficiency and luminosity is observed. Technical data on the new approach for carrier injection and on the recombination mechanism are presented. Preliminary results are also presented on the photoluminescence and electroluminescence properties of a-SiC:H/a-SiN:H multilayers.