Bipolar-mode static induction transistor: experiment and two-dimensional analysis

摘要

A bipolar-mode static induction transistor (BSIT) with a simple planar structure as an experimental device has been fabricated. Two-dimensional numerical simulation has been used to investigate the operational principle for the BSIT with the pentode-like shape revealed by the output characteristics. Using the simulation, the variation of the potential barrier as a function of the bias voltages has been explained. The results show that the potential barrier is varied uniquely according to the physical condition of the conduction channel determined by the external bias voltages. This variation can be explained easily with the DC circuit models originating from the physical conditions of the conduction channel. The analysis shows that the current in the BSIT is controlled in a complex manner by the voltages.