Modulating the bipolar junction transistor subjected to neutron irradiation for integrated circuit simulation

摘要

Bipolar junction transistors (BJTs) are susceptible to particle bombardment in radiative environment. A model that is capable of predicting the performance of a BJT subjected to neutron irradiation and that is suitable for SPICE circuit simulation is presented. It is shown that neutron irradiation affects the emitter-base space-charge region capacitance slightly but strongly influences the forward-active current gain. Results calculated from the present model compared favorably with measured dependencies available in the literature. The model was implemented in SPICE, and the performance of a BJT differential amplifier was simulated.