Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions

摘要

The radiation responses of the NPN bipolar junction transistors (BJTs) and the TTL bipolar integrated circuits (ICs) have been examined using 20, 40 and 60MeV Br ions. Key electric parameter was measured and compared after each energy irradiation. Experimental results demonstrate that the degradation in electric parameters caused by the Br ions shows a common feature for the NPN BJTs and TTL ICs, in which the degradation is strengthened with decreasing the Br ions energy. The ionizing dose (D_i) and displacement dose (D_d) as a function of the chip depth in the bipolar devices were calculated using the SRIM code, in order to analyze the radiation effects on the NPN BJTs and the Bipolar ICs. From the experiment and calculation results, it could be deduced that the Br ions mainly cause displacement damage to both the NPN BJTs and the TTL ICs, and the higher the ratio of D_d/(D_d+D_i), the larger the degradation in electric parameters at a given total dose.