A method of eliminating B-mode dielectric breakdown failure in gate oxides utilizing a charging phenomenon

摘要

An investigation of the dielectric breakdown characteristics of charged samples is discussed. B-mode dielectric breakdown failure was eliminated by scrubbing gate oxide films using a brush. Various scrubbing experiments revealed that this occurred due to charging to a voltage close to the intrinsic breakdown voltage of the gate oxide film. Other characteristics such as C-V curves and time-dependent dielectric breakdown characteristics were not degraded by the charging. The method can be of value in the manufacture of reliable oxide films in ULSI.