The effects of H/sub 2/-O/sub 2/-plasma treatment on the characteristics of polysilicon thin-film transistors

摘要

The effects of H/sub 2/-plasma followed by O/sub 2/-plasma treatment on n-channel polysilicon thin-film transistors (TFTs) were investigated. It was found that the H/sub 2/-O/sub 2/-plasma treatment is more effective in passivating the trap states of polysilicon films than the H/sub 2/-plasma or O/sub 2/-plasma treatment only. Hence, it is more effective in improving the device performance with regard to subthreshold swing, carrier mobility, and the current ON/OFF ratio. It is also found that thermal annealing of plasma-treated devices increases the deep states but has no effect on the tail states of the devices.