A new charge pumping method for determining the spatial distribution of hot-carrier-induced fixed charge in p-MOSFETs

摘要

A charge pumping method is proposed for the direct measurement of the hot-carrier-induced fixed charge near the drain junction of p-MOSFETs. By holding the rising and falling slopes of the gate pulse constant and then varying the highest and lowest levels, the local threshold and local flatband voltages are readily obtained. The spatial distribution of fixed charges is directly calculated from the changes that occur in these curves after the application of stress. This method is quite simple and, specifically, requires no information about impurity concentrations in the substrate. The validity and reliability of the method have been supported by computer simulations.