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外文期刊>IEEE Transactions on Electron Devices
>Three-dimensional finite-element investigation of current crowding and peak temperatures in VLSI multilevel interconnections
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Three-dimensional finite-element investigation of current crowding and peak temperatures in VLSI multilevel interconnections
Multilevel interconnection vias are investigated using a coupled thermal and electrical conduction model in three dimensions and the finite-element method. The concept of using a volume to quantify current crowding is introduced. Close to a contact via it is found that the peak temperature moves between the upper track and the via as a function of geometry.
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