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首页> 外文期刊>IEEE Transactions on Electron Devices >Three-dimensional finite-element investigation of current crowding and peak temperatures in VLSI multilevel interconnections
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Three-dimensional finite-element investigation of current crowding and peak temperatures in VLSI multilevel interconnections

机译:VLSI多级互连中电流拥挤和峰值温度的三维有限元研究

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摘要

Multilevel interconnection vias are investigated using a coupled thermal and electrical conduction model in three dimensions and the finite-element method. The concept of using a volume to quantify current crowding is introduced. Close to a contact via it is found that the peak temperature moves between the upper track and the via as a function of geometry.
机译:使用三维热传导模型和有限元方法研究了多层互连通孔。引入了使用体积来量化当前拥挤的概念。在接触通孔附近发现峰值温度随几何形状在上走线和通孔之间移动。

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