首页> 外文会议>2010 11th International Conference on Thermal, Mechanical amp; Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) >Design of Al pad geometry for reducing current crowding effect in flip-chip solder joint using finite-element analysis
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Design of Al pad geometry for reducing current crowding effect in flip-chip solder joint using finite-element analysis

机译:使用有限元分析设计铝垫几何形状以减少倒装芯片焊点中的电流拥挤效应

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Electromigration of flip-chip solder joints has been studied extensively in recent years. It was investigated in plenty of studies that the current crowding effect takes place at the corner near the traces due to huge differences in cross-section area between traces and solder joint. The local high current density, which has been known as a serious reliability issue, causes the failure such as void formation and the consumption under bump metallization (UBM) to occur much earlier than expected in the current-crowding region in solder bump. As a result, to relieve the current crowding effect can significantly increase the mean-time-to-failure (MTTF) of solder bump. On the base of the Blech''s equation, the MTTF may be extended to four times of the original value when the local current density is reduced to half of its original one if the n value is taken as 2. Therefore, finding a robust design of geometry, which is effective and of low cost, has turned into a popular issue. However, there is still no technology can observe the current density directly in a current stressed sample. In order to obtain more precise observation, a three-dimensional finite element model (3D-FEM) was performed to simulate the current density distribution in solder bump. In this study, several voids are designed in the Al pad and distributed as concentric circle shape encircling the passivation opening. With these well defined voids, the maximum current density in solder joint is reduced significantly. For flip-chip structure with 1.5µm thick Al pad, the concentric circular voids could reduce the maximum current density in solder joint by more than 60%. The crowding ratio decreases from 4.03 to 1.72. Even if the Al pad is 12µm thick, the concentric circular voids also reduce the maximum current density by about 35%. The crowding ratio decreases from 2.30 to 1.46. The simulation results indicate the design is effective to relieve the current crowding effect and reduce the ma-n-nximum current density in flip-chip solder joints. To understand how concentric circular voids influence the thermal distribution of flip-chip structure, a thermal-electric multiphysics model is also performed in this study. The thermal-electric simulation results indicate that the concentric circular void also disperse the local Joule heating effect, which comes from the current crowding effect. This approach facilitates the systemic study of optimized design to relieve the current crowding effect and thus increase the electromigration resistance of solder joints. In addition, the results provide a guideline for optimal design for solder joints with a specific UBM structure.
机译:近年来,倒装芯片焊点的电迁移已得到广泛研究。由于大量研究发现,由于迹线和焊点之间的横截面积差异巨大,当前的拥挤效应发生在迹线附近的角落。局部高电流密度已被公认为是严重的可靠性问题,它会导致诸如空洞形成和凸块金属化(UBM)下的消耗之类的故障发生的时间早于在焊料凸块中的电流拥挤区域中的预期。结果,减轻电流拥挤效应会大大增加焊料凸块的平均失效时间(MTTF)。根据Blech方程,如果将n值取为2,则当局部电流密度减小到原始值的一半时,MTTF可以扩展为原始值的四倍。有效且低成本的几何设计已成为一个热门问题。但是,仍然没有技术可以直接在电流应力样品中观察电流密度。为了获得更精确的观察结果,执行了三维有限元模型(3D-FEM)以模拟焊料凸点中的电流密度分布。在这项研究中,在Al焊盘中设计了多个空隙,并以同心圆形状分布在钝化开口周围。有了这些明确定义的空隙,焊点中的最大电流密度就会大大降低。对于具有1.5μm厚的Al焊盘的倒装芯片结构,同心圆形空隙可以使焊点中的最大电流密度降低60%以上。拥挤率从4.03降低到1.72。即使Al焊盘的厚度为12μm,同心圆形空隙也会使最大电流密度降低约35%。拥挤率从2.30降低至1.46。仿真结果表明该设计可有效缓解电流拥挤效应并降低倒装芯片焊点中的最大电流密度。为了了解同心圆形空隙如何影响倒装芯片结构的热分布,在这项研究中还执行了热电多物理场模型。热电模拟结果表明,同心圆形空隙还分散了局部的焦耳热效应,这是由于电流拥挤效应引起的。这种方法有助于对优化设计的系统研究,以减轻电流拥挤效应,从而增加焊点的抗电迁移能力。此外,结果为具有特定UBM结构的焊点的最佳设计提供了指导。

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