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Design of Al Pad Geometry for Reducing Current Crowding Effect in Flip-chip Solder Joint Using Finite-element Analysis

机译:使用有限元分析减少倒装芯片焊接关节电流拥挤效应的Al焊盘几何设计

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Electromigration of flip-chip solder joints has been studied extensively in recent years. It was investigated in plenty of studies that the current crowding effect takes place at the corner near the traces due to huge differences in cross-section area between traces and solder joint. The local high current density, which has been known as a serious reliability issue, causes the failure such as void formation and the consumption under bump metallization (UBM) to occur much earlier than expected in the current-crowding region in solder bump. As a result, to relieve the current crowding effect can significantly increase the mean-time-to-failure (MTTF) of solder bump. On the base of the Blech's equation, the MTTF may be extended to four times of the original value when the local current density is reduced to half of its original one if the n value is taken as 2. Therefore, finding a robust design of geometry, which is effective and of low cost, has turned into a popular issue. However, there is still no technology can observe the current density directly in a current stressed sample. In order to obtain more precise observation, a three-dimensional finite element model (3D-FEM) was performed to simulate the current density distribution in solder bump. In this study, several voids are designed in the Al pad and distributed as concentric circle shape encircling the passivation opening. With these well defined voids, the maximum current density in solder joint is reduced significantly. For flip-chip structure with 1.5μm thick Al pad, the concentric circular voids could reduce the maximum current density in solder joint by more than 60%. The crowding ratio decreases from 4.03 to 1.72. Even if the Al pad is 12μm thick, the concentric circular voids also reduce the maximum current density by about 35%. The crowding ratio decreases from 2.30 to 1.46. The simulation results indicate the design is effective to relieve the current crowding effect and reduce the maximum current density in flip-chip solder joints. To understand how concentric circular voids influence the thermal distribution of flip-chip structure, a thermal-electric multiphysics model is also performed in this study. The thermal-electric simulation results indicate that the concentric circular void also disperse the local Joule heating effect, which comes from the current crowding effect. This approach facilitates the systemic study of optimized design to relieve the current crowding effect and thus increase the electromigration resistance of solder joints. In addition, the results provide a guideline for optimal design for solder joints with a specific UBM structure.
机译:近年来,倒装芯片焊点的电迁移已经过广泛研究。它在大量的研究中被研究,因为由于痕迹和焊点之间的横截面区域差异差异,当前的拥挤效应发生在迹线附近的拐角处。局部高电流密度被称为严重可靠性问题,导致失效,例如空隙形成和凸块金属化(UBM)下的消耗,在焊料凸块中的当前挤压区域中的预期比预期更早发生。结果,为了减轻当前的拥挤效果可以显着增加焊料凸块的平均故障(MTTF)。在Blech等式的基础上,如果N值被取为2.因此,MTTF可以扩展到原始值的原始值的一半时的4次。因此,找到了几何结构的强大设计,这是有效的,成本低,变成了一个受欢迎的问题。然而,仍然没有技术可以直接观察到当前压力的样本中的电流密度。为了获得更精确的观察,进行三维有限元模型(3D-FEM)以模拟焊料凸块中的电流密度分布。在该研究中,在Al焊盘中设计了几个空隙,并作为环绕钝化开口的同心圆形状分布。利用这些良好定义的空隙,焊点中的最大电流密度显着降低。对于倒装芯片结构具有1.5μm厚的Al垫,同心圆形空隙可以将焊点的最大电流密度降低超过60%。拥挤比率从4.03降至1.72。即使Al垫厚12μm,同心圆形空隙也会将最大电流密度降低约35%。拥挤比率从2.30降至1.46。仿真结果表明,设计可有效地缓解当前的拥挤效果,并降低倒装芯片焊点中的最大电流密度。要了解同心圆形空隙如何影响倒装芯片结构的热分布,在本研究中也进行了热电型多体模型。热电模拟结果表明,同心圆形空隙还分散了本地焦耳加热效果,这来自当前的拥挤效果。这种方法有助于优化设计的全身性研究,以减轻当前的拥挤效果,从而提高焊点的电渗透阻力。此外,结果还提供了具有特定UBM结构的焊点的最佳设计指导。

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