首页> 外国专利> Three-dimensional integrated semiconductor system, has optical interconnection device coupled to photoactive device, where electrical path extends between photoactive device and current/voltage converter

Three-dimensional integrated semiconductor system, has optical interconnection device coupled to photoactive device, where electrical path extends between photoactive device and current/voltage converter

机译:三维集成半导体系统,具有与光敏器件耦合的光学互连器件,其中电气路径在光敏器件和电流/电压转换器之间延伸

摘要

The system (140) has a semiconductor substrate on insulator (SeOI) (100) including an electrically insulating material layer (104) adjacent to a main surface of a semiconductor material layer (102). An optical interconnection device (116) is coupled to a photoactive device (112) formed on the semiconductor material layer. An electrical path (146) extends between the photoactive device and a current/voltage converter (114) formed on the semiconductor material layer, and the path extends between the current/voltage converter and semiconductor devices (142A, 142B) formed over the SeOI. An independent claim is also included for a method for manufacturing a three-dimensional integrated semiconductor system.
机译:系统(140)在绝缘体(SeOI)(100)上具有半导体衬底,该半导体衬底包括与半导体材料层(102)的主表面相邻的电绝缘材料层(104)。光学互连器件(116)耦合到形成在半导体材料层上的光敏器件(112)。电气路径(146)在光敏器件与形成在半导体材料层上的电流/电压转换器(114)之间延伸,并且该路径在电流/电压转换器与形成在SeOI上方的半导体器件(142A,142B)之间延伸。还包括用于制造三维集成半导体系统的方法的独立权利要求。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号