Steady state characterization of an optically controlled p-i-n diode for low frequency switching under front/back illumination

摘要

This paper describes the determination of the steady state operating characteristics of an optically controlled Si p-i-n illuminated from either top or bottom for varying electrode spacings and conducting layer thicknesses. Optically controlled p-i-n diodes have previously been used in both microwave and pulsed power applications and are now being considered for use in high-power, low-frequency (60 Hz) switching such as Static Var Compensators.