Studies of multiplication process of a novel image intensifier of an amplified metal-oxide-semiconductor imager overlaid with electron-bombarded amorphous silicon

摘要

We studied the multiplication process of a novel image intensifier (II) of an amplified metal-oxide-semiconductor (MOS) imager (AMI) overlaid with electron-bombarded amorphous silicon (a-Si), by Monte Carlo (MC) simulation. The electron bombardment gains (EB-gains) of MC simulation for acceleration voltages between 2 and 10 kV coincide well with the measured values. The threshold voltage of 2 kV is well explained in terms of Bethe's electron beam energy losses of the Al and Si/sub x/N/sub 1-x/ layers. The penetration depth of an electron beam of 10 kV is 0.83 /spl mu/m and supports an experimentally safe optimal target thickness (1.2-1.3 /spl mu/m). The standard deviation of lateral spread is 2198 /spl Aring/. The theoretical excess noise coefficient is 1.2 between 7 and 1.3 kV, which coincides exactly with the measured value.