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首页> 外文期刊>IEEE Transactions on Electron Devices >Progress in the development of an 8-kV light-triggered thyristor with integrated protection functions
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Progress in the development of an 8-kV light-triggered thyristor with integrated protection functions

机译:具有集成保护功能的8 kV光触发晶闸管的开发进展

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摘要

Light-triggered 8-kV thyristors with an integrated breakover diode were fabricated. The adjustment of the breakdown voltage of the breakover diode (BOD) is realized by a well-defined curvature of the junction between the p-base and the n-base. A multiple amplifying gate structure, together with an integrated turn-on current limiting resistor, guarantees a safe turn-on behavior in the case of overvoltage triggering as well as during light triggering. These thyristors have successfully been put into service at the Celilo Converter Station of the Pacific Northwest-Southwest HVDC Intertie by Bonneville Power Administration in Portland/Oregon/USA. There, a mercury arc valve was replaced by a valve containing these light triggered thyristors with integrated overvoltage protection. In a further development, the amplifying gate structure was optimized in order to simplify the fabrication process and to maintain the high light sensitivity while obtaining a higher dV/dt and a higher dI/dt capability. This was realized by shrinking the optical gate, by carefully adjusting the triggering sensitivity of the amplifying gates and by widening of the turn-on current limiting thyristor. With these measures, initial investigations regarding the integration of a forward recovery protection were also performed.
机译:制作了带有集成转换二极管的光触发8kV晶闸管。可以通过在p基极和n基极之间明确定义的结曲率来实现对突破二极管(BOD)击穿电压的调节。多重放大栅极结构以及集成的导通限流电阻器可确保在过压触发以及光触发期间的安全导通行为。这些晶闸管已由美国波特兰/俄勒冈州/美国的邦纳维尔电力局成功地在太平洋西北-西南高压直流输电线路的Celilo换流站投入使用。在那里,汞弧阀被一个装有集成了过压保护的光触发晶闸管的阀所代替。在进一步的发展中,优化了放大栅极结构,以简化制造过程并保持高光敏性,同时获得更高的dV / dt和更高的dI / dt能力。这是通过缩小光闸,仔细调整放大闸的触发灵敏度以及加宽导通电流限制晶闸管来实现的。通过这些措施,还进行了有关集成前向恢复保护的初步调查。

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