The 2.45 GHz 36 W CW Si recessed gate type SIT with high gain and high voltage operation

摘要

The Si microwave recess gate type SIT (Static Induction Transistor) has been fabricated and the high drain blocking voltage up to 140 V with high gain was obtained. The power gain of 13.7 dB up to 1.7 GHz, 10 dB at 2 GHz, 6 dB at 3 GHz, and the maximum frequency of oscillation of 4 GHz in common gate configuration have been realized. The CW output power of 36 W (3.1 dB gain, /spl eta/=41%) at 2.45 GHz and 26 W (10 dB gain, /spl eta/=60%) at 900 MHz in common gate operation and 12.9 W (3.3 dB gain, /spl eta/=56%) at 2.04 GHz in common source operation with the drain bias voltages 50 to 60 V have been realized, respectively.