Design and analysis of multichannel LIGBTs in junction isolation technology

摘要

Performance of multichannel lateral insulated gate bipolar transistors (MC-LIGBTs) fabricated in a cost-effective, fully implanted, CDMOS-compatible process in junction isolation technology is reported. Due to the presence of additional MOS cathode cells, the MC concept enables a reduction in the forward voltage drop. Furthermore, the MC concept is combined with the segmented N/sup +/P/P/sup +/ anode (SA-NPN) concept in an LIGBT structure. The SA-NPN anode concept reduces turnoff losses due to a reduction in injection of holes and from the collection of electrons by the narrow base-collector shorted NPN bipolar transistor formed at the anode. It is shown that combining the MC and the SA-NPN Anode concepts creates a device that exhibits both low on-state and turnoff losses and thus best placed for use in power IC applications.