Comparison of MONOS Memory Device Integrity When Using $hbox{Hf}_{1 - x - y}hbox{N}_{x}hbox{O}_{y}$ Trapping Layers With Different N Compositions

摘要

We have studied the nitrogen composition dependence of the characteristics of TaN/HfLaON/ $hbox{Hf}_{1 - x - y}hbox{N}_{x}hbox{O}_{y}/hbox{SiO}_{2}/hbox{Si}$ MONOS memory devices. By increasing the N composition in the $ hbox{Hf}_{1 - x - y}hbox{N}_{x}hbox{O}_{y}$ trapping layer, both the memory window and high-temperature retention improved. The $hbox{Hf}_{0.3}hbox{N}_{0.2} hbox{O}_{0.5}$ MONOS device displayed good characteristics in terms of its $pm$9-V program/erase (P/E) voltage, 100- $muhbox{s}$ P/E speed, large initial 2.8-V memory window, and a ten-year extrapolated retention of 1.8 V at 85 $^{circ}hbox{C}$ or 1.5 V at 125 $^{circ}hbox{C}$ .