Comments on “1.88-$hbox{m}Omega cdot hbox{cm}^{2}$ 1650-V Normally on 4H-SiC TI-VJFET”

摘要

The discussion section of paper “1.88-$hbox{m}Omega cdot hbox{cm}^{2}$ 1650-V Normally on 4H-SiC TI-VJFET” which appeared in IEEE Transactions on Electron Devices, vol. 55, no. 8, August 2008, offers a comparative analysis between TI-VJFETs fabricated at USCI/Rutgers and VJFETs (SITs) fabricated at Northrop Grumman Electronic Systems (NGES) for power switching applications. I have a number of issues with this analysis which I wish to highlight. In addition, this paper claims VJFET performance records, which are dubious as they are based on on-resistance values obtained under bipolar operation and on blocking-voltages quoted at unspecified drain-current densities.