机译:常规蓝宝石和圆锥形图案蓝宝石衬底上生长的基于InGaN的LED的比较
Manuf. Technol. Group, Samsung LED Co., Ltd., Suwon, South Korea;
III-V semiconductors; MOCVD; compressive strength; dislocations; gallium compounds; indium compounds; light emitting diodes; sapphire; wide band gap semiconductors; InGaN-GaN-Al2O3; compressive strain; compressive stress; cone-shape-patterned sapphire substrate; conventional sapphire; crystal quality; current 20 mA; epitaxial lateral overgrowth; growth mode; lattice mismatch; light scattering; metal-organic chemical vapor deposition; photon escaping probability; power 16.5 mW; quantum efficiency; surface pattern; GaN; dislocation; external efficiency; light-emitting diode (LED); patterned sapphire;
机译:使用纳米压印技术在图案化的蓝宝石衬底上生长的高效基于InGaN的LED
机译:直接比较在Pendeo外延GaN和蓝宝石衬底上生长的InGaN基激光二极管结构的光学特性
机译:锥形图案蓝宝石上生长的GaN基LED的应力降低和增强的提取效率
机译:图案蓝宝石基板上生长的InGaN的发光二极管的特征增强
机译:通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
机译:具有不同对称性的图案化蓝宝石衬底对InGaN基LED的光输出功率的影响
机译:锥形图案蓝宝石基板上生长的IngaN的发光二极管性能的增强