A Novel Low-Voltage Low-Power Programming Method for NAND Flash Cell by Utilizing Self-Boosting Channel Potential for Carrier Heating

摘要

A novel low-voltage low-power programming method for nand Flash cell is presented. By utilizing the self-channel boosting technique, a sufficiently high local field is established in a nand string that causes efficient hot-carrier injection. This method has been successfully demonstrated in the 75-nm-node floating-gate nand cells, along with comprehensive studies on bias and timing effects. Requirements for high-voltage supporting devices, circuitry, and process in conventional Fowler–Nordheim programmed nand cells are greatly mitigated. It would be very attractive for scaled nand Flash technology in the future.