Magnetic Tunnel Junction-Based Spin Register for Nonvolatile Integrated Circuits

摘要

A magnetic tunnel junction-based register with separate read and write paths is proposed in this paper. Analysis of the operation of the circuit is performed, and methods for determining the key parameters of the device are presented. The simulation of the circuit is performed in Verilog-A, and the simulation results demonstrate the operational characteristics of the circuit. This new spin-based flip flop offers a 23% reduction in the number of devices and a 23.6% reduction in its dissipated power when compared with a pure CMOS implementation with the added benefit of nonvolatility. A 4-b shifter based on the proposed spin register is presented, too.