Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces

摘要

This paper studies the chemical and field effect passivation properties of silicon surfaces by thin hafnium oxide $(hbox{HfO}_{2})$ and aluminum oxide $(hbox{Al}_{2}hbox{O}_{3})$ layers grown by chemical-vapor-based atomic layer deposition method. Using a rigorous metal–oxide–semiconductor model and results from capacitance–voltage measurements, the density of fixed charges $(N_{f})$ and the density of interface traps $(D_{rm it})$ at the $hbox{HfO}_{2}hbox{/}hbox{Si}$ and $hbox{Al}_{2}hbox{O}_{3}hbox{/}hbox{Si}$ interfaces were obtained. Microwave photoconductivity decay measurements were used to characterize interface recombination velocities at these interfaces.