Minority Carrier Transport and Their Lifetime in InGaAs/GaAsP Multiple Quantum Well Structures

摘要

Minority carrier transport across InGaAs/GaAsP multiple quantum wells is studied by measuring the response of p-i-n and n-i-p GaAs solar cell structures. It is observed that the spectral response depends critically upon the width of the GaAsP barriers and the device polarity. Electron tunneling is not as efficient as hole tunneling due to a higher conduction band barrier. The spectral response depends on the relative magnitude of the carrier lifetime as compared with the tunneling lifetime. This paper deduces an estimated electron lifetime of 110 ns in ${rm In}_{0.14}{rm Ga}_{0.86}{rm As}$ wells and 25 ns in ${rm In}_{0.17}{rm Ga}_{0.83}{rm As}$ wells, which agree with published results.