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A 0.8-V 4096-Pixel CMOS Sense-and-Stimulus Imager for Retinal Prosthesis

机译:用于视网膜假体的0.8V 4096像素CMOS感测和成像器

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This paper presents a 0.8-V CMOS imager with 4096 pixels and an integrated sense-and-stimulus (SAS) function for retinal prosthesis. The pixel consists of a photon-to-biphasic-current converter (sense) and a balanced current-mode stimulator (stimulus) to achieve a highly integrated and low-power solution for high-resolution vision recovery. Three operation modes, that is, test mode, programming (PG) mode, and implanted (IP) mode, have been implemented for various purposes. In test mode, the internal signals are multiplexed out serially for chip verification. In PG mode, the output pattern of the current stimulator array is programmable by external addresses for patterned electrical stimulus experiments of retina. In IP mode, the chip is fully functional with a minimized number of input/output as four optimized for in vivo operation. A prototype chip with a 64 $times$ 64 SAS-pixel array, a $hbox{30} times hbox{30} muhbox{m}^{2}$ pixel size, and a 33.3% fill factor was designed and fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18- $muhbox{m}$ CMOS image sensor technology. The proposed chip was operational under a wide supply range from 0.8 to 1.8 V. The measured conversion gains and maximal biphasic current amplitudes are 144 nA/lx (1.8 V), 21 nA/lx (0.8 V), $pm hbox{50} muhbox{A}$ (1.8 V), and $pm hbox{10} muhbox{A}$ (0.8 V), respectively. The proposed SAS CMOS imager presents an integrated SAS solution for artificial retina with the highest array resolution of 4096 pixels and a low power consumption of 0.18 mW at 12.5 ft/s and a 0.8-V supply under 300-lx illumination.
机译:本文提出了一种具有4096个像素的0.8V CMOS成像器,并具有用于视网膜假体的集成式感应和刺激(SAS)功能。该像素包括一个光子-双相电流转换器(感测器)和一个平衡电流模式激励器(激励器),以实现用于高分辨率视觉恢复的高度集成且低功耗的解决方案。为了各种目的,已经实现了三种操作模式,即测试模式,编程(PG)模式和植入(IP)模式。在测试模式下,内部信号被串行多路输出以进行芯片验证。在PG模式下,电流刺激器阵列的输出模式可以通过外部地址进行编程,以进行视网膜的图案化电刺激实验。在IP模式下,该芯片具有全部功能,具有最少的输入/输出数量,其中四个针对体内操作进行了优化。在台湾设计并制造了一个原型芯片,该芯片具有64乘以64的SAS像素阵列,是hbox {30}乘以hbox {30} muhbox {m} ^ {2} $像素尺寸,填充系数为33.3%的原型半导体制造公司(TSMC)0.18- $ muhbox {m} $ CMOS图像传感器技术。拟议的芯片可在0.8至1.8 V的宽电源范围内工作。测得的转换增益和最大双相电流幅度分别为144 nA / lx(1.8 V),21 nA / lx(0.8 V),$ pm hbox {50} muhbox {A} $(1.8 V)和$ pm hbox {10} muhbox {A} $(0.8 V)。拟议中的SAS CMOS成像器提供了一种用于人工视网膜的集成SAS解决方案,具有4096像素的最高阵列分辨率和12.5 ft / s的低功耗0.18 mW,以及在300-lx照明下的0.8V电源。

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