Junctionless Silicon and In_0.53Ga_0.47As Transistors—Part I: Nominal Device Evaluation With Quantum Simulations

摘要

Despite many experimental demonstrations of III–V junctionless field-effect transistors (JLFETs), few theoretical studies have investigated their performance. We perform nonequilibrium Green’s function simulations to compare the merits of silicon and InGaAs JLFETs, including impurity, phonon, and surface roughness (SR) scattering effects through phenomenological self-energies. When ballistic transport is assumed, silicon is superior due to its higher density of states; however, we show that the presence of impurity scattering drastically alters the comparison and leads to significant performance advantages for InGaAs JLFETs. This advantage is lessened but not eliminated by SR effects, which play a more significant role in InGaAs than in silicon based on current experimental parametrizations. We also find that the degradation of electrostatic integrity in III–V devices stemming from higher material permittivity can be mitigated by channel barrier height increases caused by high electron degeneracy. Our results validate InGaAs JLFETs as promising candidates for postsilicon device technologies.