Demonstration of a Highly Tunable Hybrid nMOS-Magnetic-Tunnel-Junction Ring Oscillator

摘要

A highly tunable oscillator using magnetic tunnel junctions (MTJs) has been developed through integration with CMOS ring oscillators. MTJs are used to replace the pMOS transistors in a typical CMOS inverter fabricated in 40-nm CMOS. The hybrid MTJ-CMOS devices exhibit a voltage-controlled oscillator gain of 300–500 MHz/V and are tunable with respect to both voltage and magnetic field.