机译:通过选择性区域生长实现高阈值电压均匀性和低滞后凹栅Al2O3 / AlN / GaN MISFET
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
State Key Lab of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China;
Aluminum nitride; III-V semiconductor materials; MISFETs; Logic gates; Aluminum gallium nitride; Wide band gap semiconductors; Threshold voltage;
机译:使用PEALD AlN界面钝化层的具有低阈值电压滞后的栅极凹陷准常关Al 2 sub> O 3 sub> / AlGaN / GaN MIS-HEMT
机译:通过等离子氧化和Al2O3原子层沉积过度生长来调节AlN / AlGaN / GaN高电子迁移率晶体管的阈值电压
机译:基于部分AlN埋层的增强击穿电压GaN MISFET的潜力研究
机译:使用选择性区域生长的具有原位AlN空间层的新型常关GaN MISFET
机译:Gan-On-Aln作为高压互补电子设备的平台
机译:AlN /蓝宝石模板上的薄沟道AlGaN / GaN高电子迁移率晶体管中的高横向击穿电压
机译:在完全嵌入式GAN MISFET中了解正偏置温度不稳定